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Growth,structure, and some transport properties of topological insulators based on bismuth chalcogenide single crystals
Authors:M. V. Golubkov  J. I. Gorina  G. A. Kaljuzhnaia  V. V. Rodin  T. A. Romanova  N. N. Sentjurina  S. G. Chernook
Affiliation:1. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, 119991, Russia
2. Fiber Optics Research Center, Russian Academy of Sciences, Moscow, 119333, Russia
Abstract:Single crystals of topological insulators—bismuth chalcogenides Bi2Te3, Bi2 ? x Sn x Te3, Bi2Se3, and Bi2 ? x Cu x Se3 with different charge-carrier densities—are grown by the modified Bridgman method. Their composition and structure are investigated and temperature dependences of the electric resistance and magnetic field dependences of the Hall voltage are obtained.
Keywords:
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