A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

The paper evaluates the optimal design of the low-doped base region inside power diodes and other bipolar devices. It is demonstrated theoretically that a low-doped base region of P⁺N⁻N⁺ diodes can provide a high breakdown voltage and an optimal on-resistance . A simple, accurate and CPU timesaving approach is presented to extract an optimal value for the base region width, W_B, and its doping concentration, N_D. The paper details an analytical relation between W_B and N_D, and gives a method for quantifying the trade-off between their values for a given breakdown voltage and for obtaining the minimal on-resistance. Analytical results are confronted with experimental results for 4H-SiC- and 6H-SiC-based diodes.