Analysis of anisotropic matrix elements in GaAs quantum wells oriented in the [112] crystal axis |
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| Institution: | 1. Faculty of Mathematical and Statistical Sciences, Shri Ramswaroop Memorial University, Barabanki 225003, Uttar Pradesh, India;2. Department of Mathematics, JECRC University, Jaipur 303905, Rajasthan, India;3. Nonlinear Analysis and Applied Mathematics (NAAM) Research Group, Department of Mathematics, Faculty of Sciences, King Abdulaziz University, Jeddah 21589, Saudi Arabia;4. Department of Physics, L.N.D. College (B.R. Ambedkar Bihar University, Muzaffarpur), Motihari 845401, Bihar, India;5. Department of Mathematics, University of Rajasthan, Jaipur 302004, Rajasthan, India |
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| Abstract: | We report the experimental confirmation of optical anisotropy in 112]-oriented GaAs/(Al,Ga) As quantum well structures. A theoretical calculation of the momentum matrix elements predicts the existence of this anisotropy and its dependence on the polarization of the incident radiation. It is found that recombination emission from photoluminescence excitation for the fundamental e→hh1 transition is anisotropic for incident light polarized along the two orthogonal 1¯10] and 111¯] crystallographic directions. No anisotropy is found in identically prepared 001]-oriented structures either theoretically, or experimentally. |
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