Direct evidence for Ge preferential growth at steps and out-of-phase boundaries of (7 × 7) domains on Si(111) in solid phase epitaxy 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Direct evidence for Ge preferential growth at steps and out-of-phase boundaries of (7 × 7) domains on Si(111) in solid phase epitaxy

摘要：
收稿时间：	1994-09-19
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