| 氧化锌锡薄膜晶体管的研究 |
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| 引用本文： | 王雄,才玺坤,原子健,朱夏明,邱东江,吴惠桢. 氧化锌锡薄膜晶体管的研究[J]. 物理学报, 2011, 60(3): 37305-037305 |
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| 作者姓名： | 王雄 才玺坤 原子健 朱夏明 邱东江 吴惠桢 |
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| 作者单位： | 浙江大学物理学系,硅材料国家重点实验室,杭州 310027 |
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| 基金项目： | 国家自然科学基金(批准号:10974174), 国家重点基础研究发展计划项目(批准号:2011CB925603),浙江省自然科学基金(批准号:Z6100117, Y4080171)资助的课题. |
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| 摘 要： | 在ITO玻璃基底上用射频磁控溅射技术生长氧化锌锡(ZnSnO)沟道有源层、用PECVD生长SiO2薄膜作为薄膜晶体管的栅绝缘层研制了薄膜晶体管(TFT), 器件的场效应迁移率最高达到μn=9.1 cm2/(V ·s),阈值电压-2 V,电流开关比为104.关键词：氧化锌锡薄膜晶体管场效应迁移率
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| 关 键 词： | 氧化锌锡 薄膜晶体管 场效应迁移率 |
| 收稿时间： | 2010-05-24 |
Study of zinc tin oxide thin-film transistor |
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| Wang Xiong,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen. Study of zinc tin oxide thin-film transistor[J]. Acta Physica Sinica, 2011, 60(3): 37305-037305 |
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| Authors: | Wang Xiong Cai Xi-Kun Yuan Zi-Jian Zhu Xia-Ming Qiu Dong-Jiang Wu Hui-Zhen |
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| Affiliation: | Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China;Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang 310027, China |
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| Abstract: | Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm2/V ·s, threshold voltage of -2 V, and current on/off ratio of 104. |
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| Keywords: | zinc tin oxide thin-film transistors field effect mobility |
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