| 高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响 |
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| 引用本文： | 唐海马,郑中山,张恩霞,于芳,李宁,王宁娟,李国花,马红芝.高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响[J].物理学报,2011,60(5):56104-056104. |
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| 作者姓名： | 唐海马 郑中山 张恩霞 于芳 李宁 王宁娟 李国花 马红芝 |
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| 作者单位： | (1)济南大学物理系,济南 250022; (2)上海工程技术大学材料工程学院,上海 201620; (3)中国科学院半导体研究所,北京 100083 |
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| 基金项目： | 济南大学博士基金及上海市教育委员会科研创新项目(批准号:08YZ156)资助的课题. |
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| 摘 要： | 为研究注氮改性对注氧隔离硅材料中埋氧层性质的影响,向其埋氧层内注入了1016 cm-2的高剂量氮.实验结果表明,与未注氮的埋氧层相比,所有注氮的埋氧层中的正电荷密度显著增加.实验还发现,注氮后的退火可使埋氧层内的正电荷密度进一步上升.但与注氮导致的埋氧层内正电荷密度的显著上升相比,退火时间对注氮的埋氧层内正电荷密度的影响不大.电容-电压测量结果显示,在埋氧层内部,注氮后未退火的样品与在1100 ℃的氮气气氛下退火2.5 h的样品相比,二者具有近似相同的等效正电荷
关键词：
注氧隔离
埋氧
注氮
正电荷密度
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| 关 键 词： | 注氧隔离 埋氧 注氮 正电荷密度 |
| 收稿时间： | 2009-12-28 |
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers |
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| Tang Hai-Ma,Zheng Zhong-Shan,Zhang En-Xia,Yu Fang,Li Ning,Wang Ning-Juan,Li Guo-Hua,Ma Hong-Zhi.Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers[J].Acta Physica Sinica,2011,60(5):56104-056104. |
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| Authors: | Tang Hai-Ma Zheng Zhong-Shan Zhang En-Xia Yu Fang Li Ning Wang Ning-Juan Li Guo-Hua Ma Hong-Zhi |
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| Institution: | Department of Physics, University of Jinan, Jinan 250022, China;Department of Physics, University of Jinan, Jinan 250022, China;College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The influence of nitrogen implantation on the properties of silicon-on-insulator buried oxide using separation by oxygen implantation was studied.Nitrogen ions were implanted into the buried oxide layer with a high-dose of 1016 cm-2.The experimental results showed that the positive charge density of the nitrogen-implanted buried oxide was obviously increased,compared with the control sampes without nitrogen implantation.It was also found that the post-implantation annealing caused an additional increase of ... |
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| Keywords: | separation by oxygen implantation buried oxide nitrogen implantation positive charge density |
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