| Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究 |
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| 引用本文： | 张林,肖剑,邱彦章,程鸿亮.Ti/4H-SiC肖特基势垒二极管抗辐射特性的研究[J].物理学报,2011,60(5):56106-056106. |
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| 作者姓名： | 张林 肖剑 邱彦章 程鸿亮 |
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| 作者单位： | 长安大学电子与控制工程学院,长安大学道路交通检测与装备工程技术研究中心,西安 710064 |
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| 基金项目： | 西安市科技计划项目(批准号:CXY1012)和中央高校基本科研业务费专项资金(批准号:CHD2010JC054)资助的课题. |
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| 摘 要： | 本文采用γ射线、高能电子和中子对Ti/4H-SiC肖特基势垒二极管(SBD)的抗辐射特性进行了研究.研究发现对于γ射线和1 MeV电子辐照,-30 V辐照偏压对器件的辐照效应没有明显的影响.经过1 Mrad(Si)的γ射线或者1×l013 n/cm2的中子辐照后,Ti/4H-SiC肖特基接触都没有明显退化;经过3.43×1014 e/cm2的1 MeV电子辐照后Ti/4H-SiC的势垒高度比辐照前轻微下降,这是由于高能
关键词：
碳化硅
肖特基
辐照
偏压
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| 关 键 词： | 碳化硅 肖特基 辐照 偏压 |
| 收稿时间： | 2010-07-21 |
Radition effect on Ti/4H-SiC SBD Of gamma-ray,eletrons and neutrons |
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| Zhang Lin,Xiao Jian,Qiu Yang-Zhang,Cheng Hong-Liang.Radition effect on Ti/4H-SiC SBD Of gamma-ray,eletrons and neutrons[J].Acta Physica Sinica,2011,60(5):56106-056106. |
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| Authors: | Zhang Lin Xiao Jian Qiu Yang-Zhang Cheng Hong-Liang |
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| Institution: | School of Electronic and Control Engineering, Chang'an University, Road Traffic Detection and EquipmentEngineering Research Center, Chang'an University, Xi'an 710064, China;School of Electronic and Control Engineering, Chang'an University, Road Traffic Detection and EquipmentEngineering Research Center, Chang'an University, Xi'an 710064, China;School of Electronic and Control Engineering, Chang'an University, Road Traffic Detection and EquipmentEngineering Research Center, Chang'an University, Xi'an 710064, China;School of Electronic and Control Engineering, Chang'an University, Road Traffic Detection and EquipmentEngineering Research Center, Chang'an University, Xi'an 710064, China |
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| Abstract: | The Ti/4H-SiC Schottky barrier diodes(SBDs) were irradiated at room temperature with 60Co gamma-ray source, 1MeV electrons and neutrons, and 0V and -30 V bias voltage were applied to the diodes during gamma-ray and electron radiation. The meaurement results show that -30 V radiation bias voltage has no influence on the radiation effect of the diodes. After 1 Mrad(Si) gamma-ray and 1×1013 n/cm2neutron radiation respectively, the Schottky barrier height of the diodes basically remain the same values. After an electron dose of 3.43×1014 e/cm2, Schottky barrier height of the diodes slightly decreased, which was caused by ionizing damage of high energy electron, and recovered completely after annealing at room temperture. After gamma-ray and electron radiation, the reverse current of Ti/4H-SiC SBD had no obviously degration. The on-state resistance of the diodes increased after electron and neutron radiaiton. |
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| Keywords: | silicon carbide Schottky barrier diode bias voltage radiation effect |
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