Local environment of Te in GaTe and Ga2Te3 studied with119Sn and129I Mössbauer spectroscopy |
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| Authors: | D. Mo G. L. Zhang Z. N. Liang L. Niesen |
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| Affiliation: | (1) Laboratorium voor Algemene Natuurkunde, Materials Science Centre, Westersingel 34, 9718 CM Groningen, The Netherlands;(2) Present address: Department of Physics, Zhongshan University, Guangzhou, People's Republic of China;(3) Present address: Institute of Nuclear Research, Academia Sinica, P.O. Box 8204, Shanghai, People's Republic of China |
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| Abstract: | The compounds GaTe and Ga2Te3 have been studied with Mössbauer source spectroscopy, using the decays119mTe→119Sb→119Sn and129mTe→129I. For Ga2Te3, which has a defect zincblende structure, the spectra give satisfactory fits using two components with intensity ratio roughly 2∶1, in agreement with the two crystallographic sites in this compound. The Mössbauer spectra of GaTe are not easily understood in terms of the three inequivalent Te sites present in this compound. The relevance of these results for the interpretation of Mössbauer spectra observed after high-dose Te implantation in GaAs is discussed. |
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