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Defects in electron irradiated amorphous SiO2 probed by positron annihilation |
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| Authors: | A Uedono S Watauchi Y Ujihira O Yoda |
| Institution: | (1) Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, 153 Tokyo, Japan;(2) Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, 370-12 Gunma, Japan |
| Abstract: | Defects in 3-MeV electron irradiated amorphous (a-) SiO2 were studied by the positron annihilation technique. A high formation probability of positronium (Ps) was found for un-irradiated a-SiO2 specimens. These Ps atoms were considered to be trapped by vacancy-type defects. The formation probability of Ps was drastically decreased by the electron irradiation. This fact can be attributed to an introduction of vacancy-type defects such as oxygen vacancies by the electron irradiation and a resultant trapping of positrons by such defects. |
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