集成电路芯片温度依赖的PbSe量子点PL光谱研究

制备了3.6，5.1和6.0 nm三种尺寸的胶体PbSe量子点，并对其光学特性进行实验研究。在室温条件下，实验发现小尺寸胶体PbSe量子点的光致发光光谱随温度升高发生红移; 大尺寸胶体PbSe量子点的光致发光光谱随温度升高发生蓝移。以PbSe量子点温度依赖的光致发光光谱特性为基础，提出一种新型的集成电路芯片温度检测方法。这种新型的温度检测方法是将胶体PbSe量子点沉积在集成电路板表面，使用激光器发射出平行激光束，使芯片表面的胶体PbSe量子点层光致发光，通过红外光谱仪接收光致发光光谱，实现温度的检测;利用图像采集系统对芯片表面特定微小区域成像，实现微米尺度区域的温度检测。实验结果表明，测量精度为±3 ℃，其相对误差不大于5％。

Study of PL Spectra of PbSe Quantum Dots for IC Chip Temperature Dependence

Colloidal PbSe QDs were prepared with the particle size of 3.6, 5.1 and 6.0 nm, and the temperature-dependent optical properties of colloidal PbSe QDs were investigated. At the room temperature, the experiment showed that there is red shift with increasing temperature; photoluminescence spectra of large size colloidal PbSe QDs is blue shifted with increasing temperature. Proposed a temperature detection method of integrated circuit was proposed based on photoluminescence spectra of colloidal PbSe QDs. The method for temperature detection includes colloidal PbSe quantum dots deposited on the surface of the printed circuit board, colloidal PbSe quantum dots of the surface are excited by the laser and infrared spectrometer receives photoluminescence spectra. Image acquisition system used for micron scale areas of temperature detection collects a tiny and specific areas imaging in the surface of chip. Experiments showed that the measurement accuracy is ±3 ℃ and the relative error is less than 5％.