| Photon-bunching Effect from Two PDC Process |
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| 作者姓名： | LIU Bi-heng SUN Fang-weng HUANG Yun-feng GUO Guang-can |
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| 作者单位： | Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China |
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| 基金项目： | 本文受到浙江省自然科学基金Y404355的支助.在此表示感谢. |
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| 摘 要： | 前期的研究表明，光子晶体带隙的大小与材料的介电常数关系紧密。而EIT材料实现改变材料介电常数的性质可以促使光子晶体光子带隙与EIT研究的有机结合，可以产生可调控的光子晶体带隙结构。
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| 关 键 词： | 光子聚束效应 PDC进程 刺激发射 H-O-M干涉 |
Photon-bunching Effect from Two PDC Process |
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| LIU Bi-heng SUN Fang-weng HUANG Yun-feng GUO Guang-can.Photon-bunching Effect from Two PDC Process[J].Acta Sinica Quantum Optica,2006,12(B08):38-38. |
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| Authors: | LIU;Bi-heng;SUN;Fang-weng;HUANG;Yun-feng;GUO;Guang-can |
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| Abstract: | We investigate the photon-bunching effect from two PDC process, and point out that the effect can be predicted by H-O-M interference and stimulation emission, then we give the way to distinguish these two thoeries using high order photon correlation. We also observe the different photon-bunching phenomenon experimentally, and the result fits our theory well. |
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