| 高性能有机薄膜晶体管(OTFT)制备及其导电机制 |
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| 引用本文： | 江潮,于爱芳,祁琼. 高性能有机薄膜晶体管(OTFT)制备及其导电机制[J]. 微纳电子技术, 2009, 46(7). DOI: 10.3969/j.issn.1671-4776.2009.07.001 |
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| 作者姓名： | 江潮 于爱芳 祁琼 |
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| 作者单位： | 国家纳米科学中心,北京,100190 |
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| 基金项目： | 中科院百人计划项目;;自然科学基金项目的支持 |
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| 摘 要： | 详细介绍了在SiO2和高kHfO2介质层上制备并五苯薄膜晶体管方面的研究,特别是利用原子力显微技术(AFM)和静电力显微技术(EFM)研究了并五苯分子初始生长模式,揭示了衬底形貌、表面化学性能(包括化学清洗和聚合物层修饰)对有机半导体成膜结构和薄膜场效应晶体管性能之间的关联,包括晶体管迁移率、开关比和阈值电压等;针对并五苯初始生长成核模式的差异,分析了不同岛(畴)间畴边界对载流子在有机薄膜内输运的影响,有助于理解有机半导体薄膜导电机理。通过优化和控制介电层和有机半导体薄膜层的界面化学性质,在SiO2介质层上成功制备出迁移率为1.0cm2/V.s、开关电流比达到106的OTFT器件;在高kHfO2介质层上获得的OTFT器件的工作电压在-5V以下,开关电流比达到105,载流子迁移率为0.6cm2/V.s;器件性能指标已经达到目前国际上文献报道的最好水平。
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| 关 键 词： | 有机薄膜晶体管 并五苯 初始生长模式 导电机制 |
Fabrication of High Performance Pentacene-Based Organic Thin-Film Transistor and Its Mechanism of Mobility Enhancement |
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| Jiang Chao,Yu Aifang,Qi Qiong. Fabrication of High Performance Pentacene-Based Organic Thin-Film Transistor and Its Mechanism of Mobility Enhancement[J]. Micronanoelectronic Technology, 2009, 46(7). DOI: 10.3969/j.issn.1671-4776.2009.07.001 |
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| Authors: | Jiang Chao Yu Aifang Qi Qiong |
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| Affiliation: | National Center for Nanoscience and Technology;Beijing 100190;China |
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| Abstract: | Pentacene thin-film transistors(TFTs)were fabricated on the thermally grown SiO2 and on the high-k HfO2 gate insulators,respectively.The initial nucleation and growth of pentacene films on various pre-cleaning treated SiO2 gate insulators and on the polyimide(PS)modified high-k HfO2 insulators were systematically examined by atomic force microscope(AFM)and electric force microscopy(EFM).The performance of fabricated pentacene TFT devices was found to be highly related to the initial film growth modes.In con... |
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| Keywords: | organic thin film transistor pentacene initial growth mode conductance mechanism |
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