Direct evidence for In-crystallite growth on sputter-induced InP cones |
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Institution: | 1. Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan;2. Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan |
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Abstract: | High-resolution transmission electron microscopy proved that the cone evolution on Ar+-sputtered InP(100) entails the growth of In crystallites on the cone surface, obviously due to a preferential loss of P atoms. The In crystallites grew on the cone shank, as well as the cone tip, in a definite orientation formulated as InP(011) ∥ In(010) with InP001] ∥ In101̄]. The cones themselves were solely composed of InP, but involved the polycrystalline phase surrounding the original monocrystalline phase. Such a structural duality of InP cones may indicate that the target surface was in a quasi-liquid state during sputtering. |
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