The study of vicinal GaAs( 100) surfaces by PAX |
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| Institution: | 1. Silesian University of Technology, Gliwice, Poland;2. SMDZ in Zabrze, Department of Internal Medicine, Diabetology and Nephrology, SUM, Katowice, Poland;3. Department and Clinic of Internal Diseases, Diabetology and Nephrology, Metabolic Bone Diseases Unit, Medical University of Silesia, Katowice, Poland;1. School of Automotive Engineering, Wuhan University of Technology, Wuhan, Hubei 430070, PR China;2. School of Transportation, Wuhan University of Technology, Wuhan, Hubei 430063, PR China;3. Hubei Key Laboratory of Advanced Technology for Automotive Components, Wuhan University of Technology, Wuhan, Hubei 430070, PR China;4. Hubei Collaborative Innovation Center for Automotive Components Technology, Wuhan University of Technology, Wuhan, Hubei 430070, PR China |
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| Abstract: | The adsorption of xenon at low temperatures on both GaAs(100) and vicinal surfaces has been studied using ultraviolet photoemission spectroscopy. The Xe 5p peaks show a characteristic shift to lower binding energy with surface As-depletion. Additional weak emission features seen on the vicinal planes, shifted by around 0.45 eV to higher binding energy, are attributed to Xe adsorbed at the step sites on such surfaces. |
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