Layer-by-layer growth of PbSe studied by glancing angle scattering of 500-keV protons |
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| Institution: | 1. Department of Engineering Science, Kyoto University, Kyoto 606-01, Japan;1. Department of Chemistry and Biochemistry, University of Windsor, Windsor, ON N9B 3P4, Canada;1. University of Guelph, Department of Animal Biosciences, 50 Stone Rd. E., Guelph, Ontario, N1G 2W1, Canada;2. University of Guelph, Ridgetown Campus, 120 Main St. East, Ridgetown, Ontario, N0P 2C0, Canada;1. MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China;2. Integrated Composites Lab (ICL), Department of Chemical &Biomolecular Engineering, University of Tennessee, Knoxville, TN 37966, USA;3. Institute of Material Science and Engineering, Qingdao University, Qingdao 266071, China;4. Department of Mechanical Engineering and Integrated Nanosystems Development Institute, Indiana University-Purdue University Indianapolis, 723 W. Michigan St., Indianapolis, IN 46202, USA;5. College of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China;6. School of Material Science and Engineering, Jiangsu University of Science and Technology (JUST), No 2, Mengxi Rd, Zhenjiang, Jiangsu, China;1. Department of Biomedical Engineering, Faculty of Engineering, Mahidol University, Nakorn Pathom, 73170, Thailand;2. Department of Engineering, King Mongkut''s Institute of Technology Ladkrabang, Prince of Chumphon Campus, Chumphon, 86160, Thailand;1. Center for Research and Development in Food Cryotechnology (CCT-Conicet La Plata, UNLP), RA-1900, Argentina;2. CIEPOPF, Department of Chemical Engineering, University of Coimbra, Polo II, Pinhal de Marrocos, P-3030-790 Coimbra, Portugal;1. Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, United States;2. Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, United States;3. ICREA, pg.L.Companys 23, 08010 Barcelona, Spain;4. Department of Chemical Engineering, Polytechnic University of Catalonia, av. Diagonal 647, 08028 Barcelona, Spain |
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| Abstract: | Homoepitaxial growth of PbSe(111) is observed at 220°C by glancing angle scattering of 500-keV protons. The intensity of the specularly reflected ions shows oscillations during the growth. The period of the oscillations corresponds to the growth time for one mono-molecular layer. The oscillations are due to the oscillatory change in the surface step density during layer-by-layer growth. A simple model calculation reproduces the characteristic features of the observed oscillations reasonably well. Comparing the observed oscillations with the calculated ones, the density of the two-dimensional islands during growth is estimated. |
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