Adsorption sites of Ge adatoms on stepped Si(110) surface期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Adsorption sites of Ge adatoms on stepped Si(110) surface

Institution:	1. Advanced Material Engineering Division, Toyota Motor Corporation Higashifuji Technical Center, 1200, Mishuku, Susono, Shizuoka 410-1193, Japan;2. Department of Chemistry, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan;3. Institute of Materials Structure Science, High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba 305-0801, Japan;4. Department of Materials Structure Science, SOKENDAI (The Graduate University for Advanced Studies), 1-1 Oho, Tsukuba 305-0801, Japan

Abstract:	We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.

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