A novel silicon‐containing molecular resist material based on polyhedral oligomeric silsesquioxane, possessing trimethoxysilyl groups, was designed in order to reduce post‐exposure delay problems and to improve resolution. Since the acid‐catalyzed cross‐linking reaction of trimethoxysilyl groups occurs at room temperature, there is no necessity of post‐exposure bake. The molecular resist showed 0.7 µm line‐and‐space patterns using a mercury–xenon lamp in a contact printing mode and 100 nm line‐and‐space patterns using electron beam lithography.
