| Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells |
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| 引用本文： | 李素梅,郑卫民,宋迎新,刘静,初宁宁. Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells[J]. 中国物理 B, 2009, 18(9): 3975-3979. DOI: 10.1088/1674-1056/18/9/059 |
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| 作者姓名： | 李素梅 郑卫民 宋迎新 刘静 初宁宁 |
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| 作者单位： | (1)School of Space Science and Physics, ShandongUniversity at Weihai, Weihai264209, China; (2)School of Space Science and Physics, ShandongUniversity at Weihai, Weihai264209, China;School of Information Engineering, Shandong University atWeihai, Weihai264209, China |
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| 基金项目： | Project supported by the NationalNatural Science Foundation of China (Grant No 60776044) and theNatural Science Foundation of Shandong Province, China (Grant No2006ZRA10001). |
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| 摘 要： | This paper studies the dynamics of intra-acceptor hole relaxation inBe δ -doped GaAs/AlAs multiple quantum wells (MQW) withdoping at the centre by time-resolved pump-probe spectroscopy usinga picosecond free electron laser for infrared experiments. Lowtemperature far-infrared absorption measurements clearly show threeprincipal absorption lines due to transitions of the Be acceptor fromthe ground state to the first three odd-parity excited statesrespectively. The pump-probe experiments are performed at differenttemperatures and different pump pulse wavelengths. The holerelaxation time from 2p excited state to 1s ground state in MQW isfound to be much shorter than that in bulk GaAs, and shown to beindependent of temperature but strongly dependent on wavelength. Thezone-folded acoustic phonon emission and slower decay of thewavefunctions of impurity states are suggested to account for thereduction of the 2p excited state lifetime in MQW. The wavelengthdependence of the 2p lifetime is attributed to the diffusion of theBe atom δ -layer in quantum wells.
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| 关 键 词： | carrier relaxation multiple quantum well intra-acceptor dynamics pump-probe |
| 收稿时间： | 2008-11-13 |
Intra-acceptor hole relaxation in Be $delta$-doped GaAs/AlAs multiple quantum wells |
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| Li Su-Mei,Zheng Wei-Min,Song Ying-Xin,Liu Jing and Chu Ning-Ning. Intra-acceptor hole relaxation in Be $delta$-doped GaAs/AlAs multiple quantum wells[J]. Chinese Physics B, 2009, 18(9): 3975-3979. DOI: 10.1088/1674-1056/18/9/059 |
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| Authors: | Li Su-Mei Zheng Wei-Min Song Ying-Xin Liu Jing Chu Ning-Ning |
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| Affiliation: | School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China; School of Information Engineering, Shandong University at Weihai, Weihai 264209, China |
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| Abstract: | This paper studies the dynamics of intra-acceptor hole relaxation inBe δ -doped GaAs/AlAs multiple quantum wells (MQW) withdoping at the centre by time-resolved pump-probe spectroscopy usinga picosecond free electron laser for infrared experiments. Lowtemperature far-infrared absorption measurements clearly show threeprincipal absorption lines due to transitions of the Be acceptor fromthe ground state to the first three odd-parity excited statesrespectively. The pump-probe experiments are performed at differenttemperatures and different pump pulse wavelengths. The holerelaxation time from 2p excited state to 1s ground state in MQW isfound to be much shorter than that in bulk GaAs, and shown to beindependent of temperature but strongly dependent on wavelength. Thezone-folded acoustic phonon emission and slower decay of thewavefunctions of impurity states are suggested to account for thereduction of the 2p excited state lifetime in MQW. The wavelengthdependence of the 2p lifetime is attributed to the diffusion of theBe atom δ -layer in quantum wells. |
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| Keywords: | carrier relaxation multiplequantum well intra-acceptor dynamics pump-probe |
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