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由半导体激光器端面输出谱确定自发辐射谱
引用本文:吴正茂 夏光琼. 由半导体激光器端面输出谱确定自发辐射谱[J]. 光学学报, 1995, 15(8): 050-1052
作者姓名:吴正茂 夏光琼
作者单位:四川大学光电系,西南师范大学物理系
基金项目:国家教委留学回国人员基金,四川省科委资助
摘    要:利用射线法和平均载流子分布近似,从理论上预言了用阈值以下半导体激光器的端面输出谱来确定自发辐射谱的可能性。在此基础上,通过实验测得的阈值以下半导体激光器的端面输出谱确定了自发辐射谱,并且对自发辐射谱和增益谱进行了比较和分析。

关 键 词:半导体激光器 端面输出谱 自发辐射谱
收稿时间:1994-05-18

Determination of the Spontaneous Emission Spectrum Using Output Spectrum from End Facet of a Semiconductor Laser
Wu Zhengmao, Xia Guangqiong, Chen Jianguo, Lu Yucun. Determination of the Spontaneous Emission Spectrum Using Output Spectrum from End Facet of a Semiconductor Laser[J]. Acta Optica Sinica, 1995, 15(8): 050-1052
Authors:Wu Zhengmao   Xia Guangqiong   Chen Jianguo   Lu Yucun
Abstract:By using the ray trace method and mean carrier distribution approximation,possibility of determinins the spontaneous emission spectrum with the output spectrum from the end facet of a semiconductor laser is predicted. As a result, the spontaneous emission spectrum is determined experimentally, and the comparison between spontaneous emission spectrum and gain spectrum is discussed as well.
Keywords:semiconductor laser   Output spectmm from end facet   spontaneous emission spectrum  
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