| Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊ |
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| 引用本文： | 张雪锋,徐静平,黎沛涛,李春霞,官建国.Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack＊[J].中国物理 B,2007,16(12):3820-3826. |
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| 作者姓名： | 张雪锋 徐静平 黎沛涛 李春霞 官建国 |
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| 作者单位： | Department of Electronic Science & Technology, Huazhong University
of Science and Technology, Wuhan, 430074, China;Department of Electronic Science & Technology, Huazhong University
of Science and Technology, Wuhan, 430074, China;Department of Electrical & Electronic Engineering, the University
of Hong Kong, Pokfulam Road, Hong Kong, China;Department of Electrical & Electronic Engineering, the University
of Hong Kong, Pokfulam Road, Hong Kong, China;State Key Laboratory of Advanced Technology for Materials Synthesis
and Processing,
Wuhan University of Technology, Wuhan 430070, China |
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| 基金项目： | Project supported by the National Natural Science
Foundation of China (Grant No~60776016), the RGC of HKSAR, China (Grant
No~HKU7142/05E), and Open Foundation of State Key Laboratory of Advanced
Technology for Materials Synthesis and Processing (Grant No~ |
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| 摘 要： | A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.
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| 关 键 词： | 电介质 散射理论 退化 物理特征 |
| 文章编号： | 1009-1963/2007/16（12）/3820-07 |
| 收稿时间： | 2007-04-19 |
| 修稿时间： | 2007-05-14 |
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack |
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| Zhang Xue-Feng,Xu Jing-Ping,Lai Pui-To,Li Chun-Xia and Guan Jian-Guo.Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack[J].Chinese Physics B,2007,16(12):3820-3826. |
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| Authors: | Zhang Xue-Feng Xu Jing-Ping Lai Pui-To Li Chun-Xia and Guan Jian-Guo |
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| Institution: | Department of Electrical & Electronic Engineering, the University
of Hong Kong, Pokfulam Road, Hong Kong, China; Department of Electronic Science & Technology, Huazhong University
of Science and Technology, Wuhan, 430074, China; State Key Laboratory of Advanced Technology for Materials Synthesis
and Processing,
Wuhan University of Technology, Wuhan 430070, China |
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| Abstract: | A physical model for mobility degradation by interface-roughness scattering
and Coulomb scattering is proposed for SiGe p-MOSFET with a high-$k$
dielectric/SiO$_{2}$ gate stack. Impacts of the two kinds of scatterings on
mobility degradation are investigated. Effects of interlayer (SiO$_{2})$
thickness and permittivities of the high-$k$ dielectric and interlayer on
carrier mobility are also discussed. It is shown that a smooth interface
between high-$k$ dielectric and interlayer, as well as moderate permittivities
of high-$k$ dielectrics, is highly desired to improve carriers mobility while
keeping a low equivalent oxide thickness. Simulated results agree reasonably
with experimental data. |
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| Keywords: | MOSFET high-$k$ dielectric SiGe interface roughness scattering Coulomb
scattering |
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