Preparation,Structural Determination,and Characterization of Electronic Properties of Bis‐silylated and Bis‐germylated Lu3N@Ih‐C80 |
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Authors: | Prof?Dr Masahiro Kako Kyosuke Miyabe Dr Kumiko Sato Dr Mitsuaki Suzuki Dr Naomi Mizorogi Dr Wei‐Wei Wang Prof?Dr Michio Yamada Prof?Dr Yutaka Maeda Prof?Dr Marilyn M Olmstead Prof?Dr Alan L Balch Prof?Dr Shigeru Nagase Prof?Dr Takeshi Akasaka |
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Institution: | 1. Department of Engineering Science, The University of Electro‐Communications, Chofu 182‐8585 (Japan);2. Life Science Center of Tsukuba Advanced Research Alliance, University of Tsukuba, Ibaraki 305‐8577 (Japan);3. Department of Chemistry, Tokyo Gakugei University, Tokyo 184‐8501 (Japan);4. Fukui Institute for Fundamental Chemistry, Kyoto University, Kyoto 606‐8103 (Japan);5. Department of Chemistry, University of California, Davis, California 95616 (USA);6. Foundation for Advancement of International Science, Ibaraki 305‐0821 (Japan);7. School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (P.R. China) |
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Abstract: | Bis‐silylated and bis‐germylated derivatives of Lu3N@Ih‐C80 ( 3 , 4 , 5 ) were successfully synthesized by the photochemical addition of disiliranes 1 a , 1 b or digermirane 2 , and fully characterized by spectroscopic, electrochemical, and theoretical studies. Interestingly, digermirane 2 reacts more efficiently than disiliranes 1 a and 1 b because of its good electron‐donor properties and lower steric hindrance around the Ge?Ge bond. The 1,4‐adduct structures of 3 , 4 , 5 were unequivocally established by single‐crystal X‐ray crystallographic analyses. The electrochemical and theoretical studies reveal that the energy gaps between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the 1,4‐adducts are remarkably smaller than those of Lu3N@Ih‐C80, because the electron‐donating groups effectively raise the HOMO levels. It is also observed that germyl groups are slightly more electron‐donating than the silyl groups on the basis of the redox properties and the HOMO–LUMO energies of 4 and 5 . Bis‐silylation and bis‐germylation are effective and versatile methods for tuning the electronic characteristics of endohedral metallofullerenes. |
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Keywords: | electronic properties endohedral metallofullerenes germanium silicon trimetallic nitride |
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