GaN and GaxIn1−xN Nanoparticles with Tunable Indium Content: Synthesis and Characterization |
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| Authors: | Dr WeiWei Lei Dr Marc Georg Willinger Prof Markus Antonietti Dr Cristina Giordano |
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| Institution: | 1. Department of Colloid Chemistry, Max Planck Institute of Colloids and Interfaces, Research Campus Golm, 14424 Potsdam (Germany);2. Institute for Frontier Materials, Deakin University, Waurn Ponds VIC 3217 (Australia);3. Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Faradayweg 4‐6, 14195 Berlin (Germany);4. Current Address: School of Biological and Chemical Sciences, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom) |
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| Abstract: | Semiconducting GaN and GaxIn1?xN nanoparticles (4–10 nm in diameter, depending on the metal ratio) with tunable indium content are prepared through a chemical synthesis (the urea‐glass route). The bandgap of the ternary system depends on its composition, and therefore, the color of the final material can be turned from bright yellow (the color of pure GaN) to blue (the color of pure InN). Transmission electron microscopy (TEM and HRTEM) and scanning electron microscopy (SEM) images confirm the nanoparticle character and homogeneity of the as‐prepared samples. X‐ray diffraction (XRD), electron diffraction (EDX), elemental mapping, and UV/Vis, IR, and Raman spectroscopy investigations are used to confirm the incorporation of indium into the crystal structure of GaN. These nanoparticles, possessing adjusted optical properties, are expected to have potential applications in the fabrication of novel optoelectronic devices. |
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| Keywords: | gallium nitride indium nitride nanoparticles sol– gel processes urea |
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