| Abstract: | The paper deals with the analysis of pair diffusion models in semiconductor technology. The underlying model contains reaction‐drift‐diffusion equations for the mobile point defects and dopant‐defect pairs as well as reaction equations for immobile dopants which are coupled with a non‐linear Poisson equation for the chemical potential of the electrons. For homogeneous structures we present an existence and uniqueness result for strong solutions. Starting with energy estimates we derive further a priori estimates such that fixed point arguments due to Leray–Schauder guarantee the solvability of the model equations. Copyright © 2004 John Wiley & Sons, Ltd. |
