Microstructural Characterization of CdTe Surface
Passivation Layers |
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Authors: | WF Zhao J Cook T Parodos S Tobin David J Smith |
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Institution: | (1) Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 1-1, Katahira, 2 Chome, Aobaku, 980-8577 Sendai, Japan;(2) Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 1-1, Katahira, 2 Chome, Aobaku, 980-8577 Sendai, Japan |
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Abstract: | The microstructure of CdTe (CT) surface passivation layers deposited on HgCdTe (MCT) heterostructures has been evaluated using
transmission electron microscopy (TEM). The MCT heterostructures were grown by liquid-phase epitaxy and consisted of thick
(approximately 10 μm to 20 μm) n-type MCT layers and thin (approximately 1 μm to 3 μm) p-type MCT layers. The final CT (approximately 0.3 μm to 0.6 μm) capping layers were grown either by hot-wall epitaxy (HWE) or molecular-beam epitaxy (MBE). One of the wafers with the
CT layer grown by MBE was also annealed in Hg atmosphere at 250°C for 96 h. The as-deposited CT passivation layers were polycrystalline
and columnar. The CT grains were larger and more irregular when deposited by HWE, whereas those deposited by MBE were generally
well textured with mostly vertical grain boundaries. Observations and measurements with several TEM abrupt structurally after
annealing techniques showed that the CT/MCT interface became considerably more abrupt structurally after annealing, and the
crystallinity of the CT layer was also improved. |
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