Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect |
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| Authors: | Jung Yeonwoong Lee Se-Ho Ko Dong-Kyun Agarwal Ritesh |
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| Institution: | Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA. |
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| Abstract: | Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials |
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