The role of the auxiliary atomic ion beam in C60(+)-Ar+ co-sputtering |
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Authors: | Lin Wei-Chun Liu Chi-Ping Kuo Che-Hung Chang Hsun-Yun Chang Chi-Jen Hsieh Tung-Han Lee Szu-Hsian You Yun-Wen Kao Wei-Lun Yen Guo-Ji Huang Chih-Chieh Shyue Jing-Jong |
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Affiliation: | Research Center for Applied Sciences, Academia Sinica, Taipei 115, Taiwan. |
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Abstract: | Cluster ion sputtering has been proven to be an effective technique for depth profiling of organic materials. In particular, C(60)(+) ion beams are widely used to profile soft matter. The limitation of carbon deposition associated with C(60)(+) sputtering can be alleviated by concurrently using a low-energy Ar(+) beam. In this work, the role of this auxiliary atomic ion beam was examined by using an apparatus that could analyze the sputtered materials and the remaining target simultaneously using secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectrometry (XPS), respectively. It was found that the auxiliary 0.2 kV Ar(+) stream was capable of slowly removing the carbon deposition and suppresses the carbon from implantation. As a result, a more steady sputtering condition was achieved more quickly with co-sputtering than by using C(60)(+) alone. Additionally, the Ar(+) beam was found to interfere with the C(60)(+) beam and may lower the overall sputtering rate and secondary ion intensity in some cases. Therefore, the current of this auxiliary ion beam needs to be carefully optimized for successful depth profiling. |
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