| 6H-SiC辐照特性的低温光致发光研究 |
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| 引用本文： | 王鸥,丁元力,钟志亲,袁菁,龚敏,Chen X D,Fung S,Beling C D. 6H-SiC辐照特性的低温光致发光研究[J]. 光散射学报, 2004, 16(1): 66-69 |
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| 作者姓名： | 王鸥 丁元力 钟志亲 袁菁 龚敏 Chen X D Fung S Beling C D |
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| 作者单位： | 1. 四川大学物理科学与技术学院微电子技术四川省重点实验室,成都,610064
2. 香港大学物理系,香港 |
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| 基金项目： | 国家自然科学基金(60076010)资助 |
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| 摘 要： | 本文用低温光致发光(LTPL)技术对经中子辐照的N型6H-SiC在350℃-1650℃温度范围的退火行为进行了研究。在700℃退火后观察到D1中心(D1-center)和位于485.0nm、493.6nm处的发光中心。我们发现D1中心与深能级瞬态谱(DLTS)的E1/E2深能级对具有不同的退火行为,这否定了它们源于相同的辐照诱生缺陷的观点。D1中心可能源于由空位和反位组成的复合体。
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| 关 键 词： | 碳化硅 低温光致发光 辐照诱生缺陷 退火 |
| 文章编号： | 1004-5929(2004)01-0066-04 |
| 收稿时间： | 2003-09-10 |
| 修稿时间： | 2003-09-10 |
Low-Temperature Photoluminescence Studies on The Characteristics of Irradiated 6H-SiC |
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| WANG Ou,DING Yuang-li,ZHONG Zhi-qin,YUAN Jing,GONG Min,CHEN X D,FUNG S,BELING C D. Low-Temperature Photoluminescence Studies on The Characteristics of Irradiated 6H-SiC[J]. Chinese Journal of Light Scattering, 2004, 16(1): 66-69 |
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| Authors: | WANG Ou DING Yuang-li ZHONG Zhi-qin YUAN Jing GONG Min CHEN X D FUNG S BELING C D |
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| Affiliation: | WANG Ou~1,DING Yuang-li~1,ZHONG Zhi-qin~1,YUAN Jing~1,GONG Min~1,CHEN X D~2,FUNG S~2,BELING C D~2 |
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| Abstract: | In this article, low temperature photoluminescence (LTPL) measurements have been performed on neutron irradiated and post-annealed n-type 6H-SiC, the annealing temperature was from 350℃ to 1650℃. D1-center defect and two luminescence center which light at (485.0nm) and 493.6nm were observed after annealing above 700℃. These thermal behaviors of the D1-center are different from the E1/E2 in deep-level transient spectroscopy (DLTS) spectra, which argues against the identification that D1-center and E1/E2 originate from the same defect. We relate D1-center to the complexes of vacancies and antisites. |
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| Keywords: | 6H-SiC LTPL Irradiation-induced-defect Annealing |
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