New Ga/N‐based Active Lewis Pairs,Trifunctional Ga–Ga Compounds,Reactions with Cyanamide and Dual Insertion of Isocyanate

Hydrogallation of Me₃Si–C≡C–NR'₂ with R₂Ga–H (R = tBu, CH₂tBu, iBu) yielded Ga/N‐based active Lewis pairs, R₂Ga–C(SiMe₃)=C(H)–NR'₂ ( 7 ). The Ga and N atoms adopt cis‐positions at the C=C bonds and show weak Ga–N interactions. tBu₂GaH and Me₃Si–C≡C–N(C₂H₄)₂NMe afforded under exposure of daylight the trifunctional digallium(II) compound [MeN(C₂H₄)₂N](H)C=C(SiMe₃)Ga(tBu)–Ga(tBu)C(SiMe₃)=C(H)[N(C₂H₄)₂NMe] ( 8 ), which results from elimination of isobutene and H₂ and Ga–Ga bond formation. 8 was selectively obtained from the ynamine and [tBu(H)Ga–Ga(H)tBu]₂[HGatBu₂]₂. 7a (R = tBu; NR'₂ = 2,6‐Me₂NC₅H₈) and H₈C₄N–C≡N afforded the adduct tBu₂Ga‐C(SiMe₃)=C(H)(2,6‐Me₂NC₅H₈) · N≡C–NC₄H₈ ( 11 ) with the nitrile bound to gallium. The analogous ALP with harder Al atoms yielded an adduct of the nitrile dimer or oligomers of the nitrile at room temperature. The reaction of 7a with Ph–N=C=O led to the insertion of two NCO groups into the Ga–C_vinyl bond to yield a GaOCNCN heterocycle with Ga bound to O and N atoms ( 12 ).