Luminescence of CuInS2: I. The broad band emission and its dependence on the defect chemistry

The emission of CuInS₂ is studied as a function of the exact composition in terms of deviations from molecularity and stoichiometry. By means of temperature-dependent (4.2–220 K) and excitation-intensity-dependent measurements, the two broad emission bands usually present are correlated with donor-acceptor transitions. In In-rich material the acceptor is located at 0.10 eV above the valence band. This acceptor is ascribed to V_Cu. In Cu-rich CuInS₂ the acceptor level is located at 0.15 eV above the valence band, which is attributed to either V_In or Cu_In. Two donor levels are identified, their ionization energies being about 35 and 72 meV. These donors are present in both In and Cu-rich samples and may originate from either intrinsic defects or impurities (Fe). Also, the influence of quenching of the crystals as well as the effect of different crystal growth methods (melt-growth and vapour-growth) on the emission is studied.