| 衬底负偏压溅射对ZrN薄膜性能的影响研究 |
| |
| 引用本文： | 周建平,高玉芝,宁宝俊,张利春.衬底负偏压溅射对ZrN薄膜性能的影响研究[J].北京大学学报(自然科学版),1991(5). |
| |
| 作者姓名： | 周建平 高玉芝 宁宝俊 张利春 |
| |
| 作者单位： | 北京大学微电子学研究所
(周建平，高玉芝，宁宝俊)，北京大学微电子学研究所(张利春) |
| |
| 摘 要： | 本文采用S-抢磁控溅射系统淀积ZrN薄膜,用扫描电镜、X射线衍射、反射电子衍射、俄歇电子能谱和电学测量等方法研究了衬底负偏压溅射和溅射两种工艺方法淀积的ZrN薄膜的结构、组分和薄膜电阻率。结果表明,适当增大溅射功率,采用衬底负偏压溅射方法,有效地减少了氧的沾污,使得所淀积的ZrN薄膜的电学性能有明显改善。
|
| 关 键 词： | 村底负偏压溅射 ZrN 氧沾污 |
The Effects of Negative Substrate Bias Sputtering on the Characterization of ZrN Film |
| |
| ZHOU Jianping,GAO Yuzhi,NING Baojun,Zhang Lichun.The Effects of Negative Substrate Bias Sputtering on the Characterization of ZrN Film[J].Acta Scientiarum Naturalium Universitatis Pekinensis,1991(5). |
| |
| Authors: | ZHOU Jianping GAO Yuzhi NING Baojun Zhang Lichun |
| |
| Abstract: | The ZrN films were deposited by S-gun sputtering system. The crystalline structure, composition and electrical resistivity of ZrN film were investigated by X-ray diffraction analysis, Auger electron spectroscopy (AES) and electrical measurements.The effects of N2 flow ratio of the sputtering gas, sputtering power and substrate temperature on the properties of ZrN film were studied. The results showed that the resistivity of ZrN film was reduced by increasing power or raising substrate temperature, which was connected directly with the reduction of oxygen content of ZrN film. In order to prepare excellent ZrN films, negative substrate bias sputtering was adopted, which reduced effectively oxygen impurity concentration and the electric characteristic of deposited ZrN film was improved distinctly. |
| |
| Keywords: | Negative substrate bias sputtering ZrN Oxygen contamination |
| 本文献已被 CNKI 等数据库收录！ |
|
