Effect of in addition on some physical properties of the As2Se3 amorphous system |
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| Authors: | M. M. El-Ocker M. H. El-Fouly S. A. Fayek H. Talaat G. A. M. Amin |
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| Affiliation: | (1) Physics Department, Faculty of Science, Al-Azhar University, Cairo, Egypt;(2) Solid State and Electronics Department, National Center for Radiation Research and Technology, 3, Ahmad Elzumor Str., P.O. Box 29, Cairo, Egypt |
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| Abstract: | The effect of In content on do electrical conductivity and DTA of the system (As2Se3)1-x. Inx, x=0, 0.01, 0.05, has been studied. The electrical energy gap was found to increase for an In content 0.01% and decrease for an In content 0.05%. The samples exhibit the three conduction mechanisms proposed by Mott and Davis. The activation energy was calculated for each mechanism. The effect of heating rate on the transition temperatures (Tg,Tc,Tm) was studied and the variation of the crystallization-peak position was used to calculate the activation energy and the order of the crystallization process. |
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| Keywords: | 73.60 72.20 61.40 |
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