| PECVD制备AZO（ZnO:Al）透明导电薄膜 |
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| 引用本文： | 陈兆权,刘明海,刘玉萍,陈伟,罗志清,胡希伟.PECVD制备AZO（ZnO:Al）透明导电薄膜[J].物理学报,2009,58(6):4260-4266. |
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| 作者姓名： | 陈兆权 刘明海 刘玉萍 陈伟 罗志清 胡希伟 |
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| 作者单位： | 华中科技大学电气与电子工程学院，核聚变与电磁新技术教育部重点实验室，武汉 430074 |
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| 基金项目： | 国家教育部留学回国人员科研启动基金资助的课题. |
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| 摘 要： | 采用PECVD（等离子体增强化学气相沉积）工艺在普通玻璃和Si基上制备出了方块电阻低至89 Ω，可见光透过率高达79%，对基体附着力强的多晶态的AZO（ZnO:Al）薄膜.采用PECVD法制备AZO薄膜是一种有益的尝试，AZO透明导电薄膜不仅具有与ITO（透明导电薄膜，如In2O3:Sn）可比拟的光电特性，而且价格低廉、无毒，在氢等离子体环境中更稳定，所获结果对实际工艺条件的选择具有一定借鉴作用和参考价值.
关键词：
AZO（ZnO:Al）
等离子体增强化学气相沉积
透明导电薄膜
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| 关 键 词： | AZO（ZnO:Al） 等离子体增强化学气相沉积 透明导电薄膜 |
| 收稿时间： | 2008-08-30 |
Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition |
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| Chen Zhao-Quan,Liu Ming-Hai,Liu YuPing,Chen Wei,Luo Zhi-Qing,Hu Xi-Wei.Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition[J].Acta Physica Sinica,2009,58(6):4260-4266. |
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| Authors: | Chen Zhao-Quan Liu Ming-Hai Liu YuPing Chen Wei Luo Zhi-Qing Hu Xi-Wei |
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| Institution: | Chen Zhao-Quan,Liu Ming-Hai,Liu Yu*Ping,Chen Wei,Luo Zhi-Qing,Hu Xi-Wei |
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| Abstract: | AZO（ZnO:Al） polycrystalline thin films with strong adhesion to the substrate, as low as 89 Ω of sheet electronic resistivity and as high as 79% of visible light transmittance,are fabricated by PECVD （plasma enhanced chemical vapor deposition） method on glass and silicon substrate. The AZO film fabricated by PECVD is a useful attempt. The AZO transparent conductive film has the good photovoltaic properties like that of ITO （In2O3: Sn）; moreover, it is cheap, more nontoxic, and more stable in hydrogen plasma environment than ITO. The results obtained are very important to the selection of the technical conditions. |
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| Keywords: | AZO(ZnO:Al) |
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