Surface photovoltage investigations of Cd1−xMnxTe for x = 0.01 and 0.10

Surface photovoltage investigations of Cd_1−xMn_xTe monocrystals for x = 0.01 and 0.10 were performed in the temperature range between 100 and 300 K with a modified Kelvin method at a pressure of 10⁻⁵ Pa. The surfaces with orientation (110) were ground, polished with “Gamal”, and rinsed in acetone and alcohol. Three types of effects were observed on the surface spectroscopy curves: A sharp increase in photovoltage, connected with the electron band-to-band transitions for a photon energy equal to the energy gap. Photovoltage quenching attributed to the existence of surface states with energy just above the edge of the valence band. Increase in photovoltage in the range between 0.9 and 1.0 eV resulting from electron transitions between the valence band and energy states connected with manganese ions.