ZnSxSe1-x单晶的霍尔迁移率

用Vah der Pauw法在77～300K温度范围内测试了n-ZnSxSe1-x(x=0.15)单晶的霍尔迁移率,共最大值为2150cm2/V·s迁移率随温度变化的实验结果与载流子散射的几种理论模型曲线相比较,得出在120K附近为界,在高温区中极化的光学声子散射限定迁移率;在低温区中光学声子散射和离化本征受主散射的混合模型或离化本征受主散射限定迁移率。认为离化本征受主是一次电离的Zn空位。

HALL MOBILITY OF ZnSxSe1-x SINGLE CRYSTALS

High-purity single crystals of ZnSxSe1-x (x=0.15) were grown with sublimation method under a controlled partial pressure of selenium and sulphur corresponding to the minimum total pressure. The crystal wafers were taken from the grown ZnSxSe1-x single crystal on cleaving along the (110) cleavage plane. The cleaved crystals were heat-treated at 1024℃ for 64 hours in molten Zn, which is labelled sample A. The sample A was heat-treated again at 350℃ for 3 hours, this sample is labelled B. When the sample A was heat-treated at 1030℃ for 119 hours under 100 Torr of the zinc partial pressure, it is labelled C. Ohmic contacts of In dot were made with a supersonic soldering iron. The carrier concentration and Hall mobility of n-ZnSxSe1-x(x=0.15) were measured at the range of from liquid nitrogen temperature to room temperature with Van der Pauw method.