量子限制受主远红外电致发光器件的制备与测量

采用分子束外延技术生长GaAs/AlAs三量子阱，并在中间的GaAs阱中δ-掺杂浅受主杂质Be原子,制作出量子限制受主远红外Teraherz原型电致发光器件.实验上测量得到4.5 K时器件的电致发光谱（EL）和电传输特性（I-V曲线）.在EL发射谱中清楚地观察到222 cm^-1处宽的尖峰，这来源于Be受主奇宇称激发态到其基态的辐射跃迁,而非辐射弛豫过程则使发射谱的信号很弱.另外在I-V曲线中072和186 V的位置出现两个共振隧道贯穿现象，分别对应于中间δ-掺杂量子阱受主能级1s_3/2(Γ₆+Γ₇)到左边非掺GaAs量子阱中HH带，及右边非掺杂GaAs量子阱中HH重空穴带到中间掺杂GaAs量子阱中Be受主杂质原子奇宇称激发态2p_5/2(Γ₆+Γ₇)能级的共振隧穿. 关键词： 量子限制效应 电致发光 共振隧穿效应 δ-掺杂GaAs/AlAs三量子阱

Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

GaAs/AlAs triple-quantum-well samples were grown by molecular beam epitaxy,and the middle GaAs quantum-well layer was delta-doped at the well centre with Be shallow acceptors.Then the far-infrared Teraherz prototype emitter was fabricated using the samples.Electroluminescence(EL) and current-voltage characteristics(I-V) were measured at 4.5 K.In the EL spectrum,a wide peak was observed clear 222 cm-1,which is attributed to the Be acceptor's radiative transitions from the excited odd-parity states to the gro...