Final-state-interactions in the infrared absorption of doped semiconductors

We calculate the profile of the infrared inter-valence-band absorption in p-doped non-polar semiconductor as modified by the final-state interaction of electronic excitations with optical phonons. The absorption coefficient vanishes at a light frequency equal to the frequency of the non-polar optical vibrations. The spectrum is asymmetric with respect to the absorption minimum. We show that the type of asymmetry depends on the position of the optical phonon energy relative to the electronic continuum. The results are compared to available data for p-doped Si.