Aes study of the segregation behaviour of silicon in high-silicon steel during oxidation |
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| Authors: | A. Mosser S.C. Srivastava B. Carrière |
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| Affiliation: | Laboratoire de Cristallographie, ERA 7 du CNRS, 4 Rue Blaise Pascal, F-67000 Strasbourg, France |
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| Abstract: | The segregation behaviour of silicon during oxidation of a high-silicon steel has been investigated by AES. The results show that silicon seems to have two states of oxidation: one leading to the formation of SiOx and iron oxides when the oxidation and the following heat treatments in vacuum are performed below 500°C and the other occurring at temperatures higher than 500°C, leading to the formation of SiO2 and segregation of this species toward the surface without oxidation of iron. |
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