On the electronic structure of cleaved GaAs(110) surfaces exposed to formic acid |
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Authors: | Monika Mattern-Klosson XM Ding H Lüth A Spitzer |
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Institution: | 2. Physikalisches Institut der Rheinisch-Westfälischen Technischen Hochschule Aachen, D-5100 Aachen, Fed. Rep. of Germany |
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Abstract: | GaAs(110) surfaces cleaved in UHV and exposed to HCOOH have been studied by work function measurements (Kelvin method), electron energy loss spectroscopy (ELS) and by low energy electron diffraction (LEED). From the different changes of the work function on n- and p-type material information about intrinsic and extrinsic surface states is derived. In the loss spectra the adsorbed formate species causes a loss near 9 eV. The intensity of the loss near 20 eV generally ascribed to an excitonic transition from the Ga 3d core level into surface states is reduced only by a factor of two after saturation with HCOOH. This might be related to the c(2 × 2) superstructure observed in LEED, which suggests a saturation coverage of half a monolayer. |
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Keywords: | To whom correspondence should be addressed Present address: Department of Chemistry University of California Santa Barbara California 93106 USA |
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