Study of Ag/Si(111) submonolayer interface: I. Electronic structure by angle-resolved UPS |
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Authors: | T Yokotsuka S Kono S Suzuki T Sagawa |
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Institution: | Department of Physics, Faculty of Science, Tohoku University, Sendai 980, Japan |
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Abstract: | Angle-resolved ultraviolet photoelectron spectra have been measured for well defined Ag/Si(111) submonolayer interfaces of (1) , (2) “Si(111)(6 × 1)-Ag”, and (3) Ag/Si(111) as deposited at room temperature. Non-dispersive and very narrow (FWHM ~ 0.4–0.5 eV) Ag 4d derived peaks are found at 5.6 and 6.5 eV below the Fermi level for surface (1) and at 5.3 and 6.0 eV for surface (2). Dispersions of sp “binding” states in the energy range between EF and Ag 4d states have been precisely determined for surface (1). Electronic structures similar to those of the Ag(111) surface, including the surface state near EF, have been observed for surface (3). |
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