Ion implantation |
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Authors: | G Langouche |
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Institution: | (1) Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium |
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Abstract: | The extreme sensitivity of Mössbauer Spectroscopy to the local atomic and electronic configuration around ion implanted Mössbauer probes is demonstrated in a number of recent defect configuration studies in semiconductors and metals. A surge of interest is observed towards Mössbauer studies on high dose implantations connected with materials research: recent studies are reviewed dealing with ion beam synthesis, ion beam modification and ion beam mixing of materials. |
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