| Abstract: | This study describes the formation of a primary silicon network during separation of an Al‐30% Si melt and the process conditions to make bigger primary silicon crystals. As the crucible rotates in the centrifugal separation, the unfrozen aluminum‐rich phase and small silicon particles are pushed outside through the openings in the silicon network. As a result, primary silicon crystals are separated in the form of a foam after centrifugation. The recovery of the silicon ranged from 13 to 18% depending on the location in the crucible. The size of the primary silicon achieved by changing the cooling rate and quenching temperature during solidification is also measured using a quenching furnace. Primary silicon particles exhibit a coarse, plate‐like morphology, although small star‐like silicon particles are also found in the aluminum‐rich matrix. The fraction of plate silicon decreases, while the fraction of small globular silicon increases with an increasing cooling rate. The thickness of the primary silicon plate also decreases with an increasing cooling rate in the samples quenched at various temperatures during solidification. |
