Abstract: | We systematically measured thermal conductivity of GexSb(As)10Se90−x, GexSb15Se85−x, and GexSb(As)20Se80−x chalcogenide glasses by measuring their Stokes and anti‐Stokes Raman scattering spectra and estimating the temperature raised by laser irradiation via the ratio of Stoke and anti‐Stokes scattering cross‐section. We aimed at demonstrating the viability of Raman scattering method for thermal conductivity measurements, and understanding the role of chemical composition in determining thermal conductivity of the chalcogenide glasses. We found that, while the values of the thermal conductivity measured in the paper are in a range from ~0.078 to 1.120 Wm‐1K‐1 that are in agreement with those reported data in the literatures, thermal conductivity increases before it reaches a maximum at the glass with chemically stoichiometric composition, and then decreases with increasing Ge content. We ascribed the threshold behavior of the thermal conductivity to the demixing of the structural units like GeSe2, As2Se3 and Sb2Se3 from the main glass network. The present study demonstrated that Raman scattering method is simple and easy to measure thermal conductivity of the material. Copyright © 2014 John Wiley & Sons, Ltd. |