Crystal growth experiments in the systems Ni2MSbO6 (M = Sc,In) using chemical vapour transport reactions: Ni2InSbO6 and NiSb2O6 crystals in the millimetre range

Endothermic chemical vapour transport (CVT) reactions of Ni₂MSbO₆ (M = Sc, In), using a temperature gradient of 1313 → 1233 K and HgCl₂, HgBr₂, PtCl₂ or TeCl₄ as transport agents, led to growth of Ni₂InSbO₆ single crystals in the millimetre range, whereas in the case of Ni₂ScSbO₆ an incongruent dissolution of the solid in the source region was observed, leading to the formation of single crystals of the ternary phase NiSb₂O₆ in the sink region. The crystal structures of the obtained crystals were refined from single crystal X‐ray data with high precision Ni₂InSbO₆: R3, Z = 3, a = 5.21640(10) Å, c = 14.0142(3) Å, 1279 structure factors, 33 parameters, RF² > 2σ(F²)] = 0.0189; NiSb₂O₆: P4₂/mnm, Z = 2, a = 4.63910(10) Å, c = 9.2182(2) Å, 500 structure factors, 19 parameters, RF² > 2σ(F²)] = 0.0145]. Ni₂InSbO₆ crystallizes in a corundum‐related structure, NiSb₂O₆ in the trirutile structure type. Spontaneous polarization and the ferroelectric transition temperature were estimated from the atomic arrangement and cation displacement along the polar axis in Ni₂InSbO₆. Magnetic measurements on Ni₂InSbO₆ evidence an antiferromagnetic transition near T_N = 74 K, with significant magnetic frustration.