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Organic low-dimensional structure electroluminescent material characteristics and devices
Authors:Liu  S.  Huang  J.  Yang  K.  Jiang  H.
Affiliation:(1) National Laboratory of Integrated Optoelectronics, Jilin University, Changchun, 130023, P.R. China;(2) Photonics Research Group, School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798
Abstract:Photoluminescence (PL) characteristics of organic doped films are studied as a function of dopant concentration, doped layer thickness. The luminescence properties of doped films are decided by Förster energy transfer rate between host and guest and fluorescence quenching effect of guest. For Alq:rubrene doped film at 5% doping level, we fabricated and characterized organic doped quantum-well structure device, and observed significant quantum size effect. For Alq:QAD doping system, at low doping level of 0.4%, the intermolecular spacing between QAD molecules is relatively large, the interaction between neighboring QAD molecules is very small due to the strong localization of the carriers in the single QAD molecules, the PL properties of Alq:QAD doped films only depends on the PL properties of single isolated QAD molecules, which is somewhat similar to the inorganic quantum dot structure. We also reported the electroluminescent performance of the Alq:QAD system.
Keywords:electroluminescence  low-dimensional  organic  photoluminescence
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