An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy |
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作者姓名: | 雷振坤 亢一澜 胡明 邱宇 徐晗 牛红攀 |
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作者单位: | [1]DepartmentofMechanics,SchoolofMechanicalEngineering,TianjinUniversity,Tianjin300072 [2]DepartmentofElectronicScienceandTechnology,SchoolofElectronicInformationEngineering,TianjinUniversity,Tianjin300072 |
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摘 要: | Micro-Raman spectroscopy of porous silicon films of micrometre thickness and on silicon bulk substrates is carried out.The practical information is given for applications of stress measurements in the films which were obtained with electrochemical etching technique.Higher residual stress (reached GPa) in the etched area falls continuously through the transitional area to the un-etched area of the sample.However,the stress gradient is smaller in the etched or un-etched area and increases in the transitional area between the two areas.Using atomic force microscopy to investigate the surface appearance of porous silicon films,the micro-cavity structure is expected to relate to the distribution of residual stress.
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关 键 词: | 实验分析 残余应力测量 多孔硅薄膜 微拉曼光谱学 电化学蚀刻技术 MRS |
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