基于RTD的新型D锁存器设计

共振隧穿二极管（RTD）作为一种较成熟的量子器件，具有独特的负内阻特性，由RTD组成的单双稳态转换逻辑单元（MOBILE）能够很好地利用该特性进行数字电路设计.基于MOBILE，设计了一种新的RTD输出控制电路.该电路的优点是将RTD的正向和反向电流电压特性相结合，无须使用面积较大的三端器件，电路设计较便捷.采用RTD输出控制电路和HEMT器件，设计了一种新的D锁存器.该D锁存器采用高电平偏置电压，不仅可使MOBILE获得需要的高电平触发方式，而且电路具有自锁特性.HSPICE仿真实验证明，该D锁存器不仅电路结构简单，而且功耗低、速度快.

A novel D-latch design based on RTD

The resonant tunneling diode (RTD) as a relatively mature quantum device, has a unique characteristic of negative differential resistance. Naturally, the monostable-bistable transition logic element (MOBILE) composed of RTDs can make good use of this characteristic for digital circuit design. This paper presents a new RTD control-output method with MOBILE. The advantage of this method is that the forward and reverse current voltage characteristics of RTD are combined, therefore, the three-terminal devices with large area could be avoided and the circuit design becomes convenient. With the RTD control-output method and a HEMT device, a novel D-latch was designed. The D-latch has a high level of bias voltage, which not only enables the high-level trigger mode of the MOBILE, but also possesses the characteristic of self-locking. The HSPICE simulation and analysis show that the D-latch has low-power consumption and fast-working speed, meanwhile it has a very simple circuit structure.