| 能态密度及其在解释半导体物理问题中的应用 |
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| 引用本文： | 林鸿生. 能态密度及其在解释半导体物理问题中的应用[J]. 大学物理, 1998, 17(4): 8-10 |
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| 作者姓名： | 林鸿生 |
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| 作者单位： | 中国科学技术大学物理系,安徽,合肥,230026 |
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| 摘 要： | 通过对半导体杂质饱和电离，灰锡半导体特性以及Ｇｕｎｎ效应等的解释，指出能态密度在研究半导体物理现象中的重要应用。
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| 关 键 词： | 能态密度 杂质饱和电离 Gunn效应 半导体物理 |
THE DENSITY OF STATES AND ITS APPLICATION TO INTERPRETATION OF PHYSICAL PHENOMENA IN SEMICONDUCTORS |
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| Lin Hongsheng. THE DENSITY OF STATES AND ITS APPLICATION TO INTERPRETATION OF PHYSICAL PHENOMENA IN SEMICONDUCTORS[J]. College Physics, 1998, 17(4): 8-10 |
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| Authors: | Lin Hongsheng |
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| Abstract: | The origin of saturation ionization of impurities, semiconducting properties of Gray Tin and Gunn effect is analyzed. It clearly shows the important role of density of states in study of physical phenomena in semiconductors. |
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| Keywords: | density of states saturation ionization of impurities gunn effect |
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