The linkage between macroscopic gettering mechanisms and electronic configuration of 3d-elements in p/p+ epitaxial silicon wafers

We have measured the gettering efficiencies for Cr, Mn, Fe, Co, Ni and Cu in p/p+ epitaxial wafers. The gettering test started with a reproducible spin-on contamination on the front side of the wafers in the 10¹²–10¹⁴ atoms/cm² range, followed by thermal treatment to redistribute the metallic impurities in the wafer. The gettering efficiencies were measured by a novel wet chemical stratigraphic etching technique in combination with inductively-coupled plasma mass spectrometry. The residual bulk metal contamination was also measured by this method. This procedure led to global distributions of the 3d elements on the wafer’s front side, in the bulk of the wafer and on the wafer’s back side. Recovery rates were found to be 34%, 2.3%, 100%, 85%, 100% and 100% for Cr, Mn, Fe, Co, Ni and Cu, respectively. An impurity segregation effect in the wafer bulk was measured for Cu (100%) and Cr (34%), while no detectable segregation-induced gettering mechanisms were detected for the other elements in the applied concentration range. The segregation-induced gettering mechanisms were interpreted from the electronic structure of the metallic impurities. For segregation gettering by increased solubility in p+ silicon, the metallic species must form donors. Only Cu⁺ (3d ¹⁰) and Cr⁺ (3d ⁵) can form singly positively charged species that exhibit a spherical electronic distribution. It is well known from spinell structures that 3d ¹⁰ and, to a smaller extent 3d ⁵, are stable configurations in tetrahedral structures like the silicon lattice. Thus, we link the segregation-induced gettering mechanism in p/p+ epitaxial wafer to the electronic configuration of the 3d elements. Received: 19 January 2001 / Accepted: 31 January 2001 / Published online: 20 June 2001