Investigation of porous InP by X-ray diffraction,IR spectroscopy,USXES, XANES spectroscopy,and photoluminescence |
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| Authors: | E. P. Domashevskaya V. M. Kashkarov P. V. Seredin V. A. Terekhov S. Yu. Turishchev I. N. Arsentyev V. P. Ulin |
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| Affiliation: | (1) Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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| Abstract: | Complex investigation of the layers of porous indium phosphide (por-InP), obtained by anodic pulsed electrochemical etching of single-crystal n-InP(100) wafers (n ～ 1018), has been performed using X-ray diffraction, IR spectroscopy, ultrasoft X-ray spectroscopy, X-ray absorption near-edge structure spectroscopy, and photoluminescence. The data obtained indicate that the surface layers of por-InP have a cluster structure and contain InP quasi-molecules. |
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