Neutralization of ions at an electronically excited semiconductor surface |
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| Authors: | Hai-Woong Lee William C Murphy Thomas F George |
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| Institution: | Department of Physics, Oakland University, Rochester, Michigan 48063, USA;Department of Chemistry, University of Rochester, Rochester, New York 14627, USA |
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| Abstract: | Neutralization of positive ions colliding with a semiconductor surface is studied. It is shown that the neutralization probability can be significantly enhanced if the surface exposed to the impinging ions is electronically excited. The basic reason behind this is that the impinging ions have easier access to the excited surface electrons than to bulk electrons. |
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